M57958L Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – HYBRID IC FOR DRIVING IGBT MODULES

MITSUBISHI HYBRID ICs
M57958L
HYBRID IC FOR DRIVING IGBT MODULES
Block Diagram
5
6
2
185Ω
7
1
Outline Drawing
51.3 MAX
8
Dimensions in mm
10.0 MAX
M57958L
29 MAX
15.5 MAX
Test Circuit
2.54 ± 0.1
2.54 × 7 =
17.78 ± 0.2
0.55 ± 0.1
19 MAX
1
8
V_IN
1
2
TTL, etc.
16mA
M57958L
5
6
7
8
47µF
C_ext = 47µF
V_CC
V_EE
= 15V = 10V
4.5 ± 1.5
1.8 MAX
0.35 ± 0.2
10.0 MAX
8.5 MAX
V_IN
MEASUREMENT
POINT
R_ext
V_OUT
t_r
18V
0
t_PLH
t_f
90%
10%
t_PHL
Precaution:
The value of “R_ext” should be selected according to the guidelines in
Section 4.6.2 of Application Notes.
Also, the value of “R_ext” should be selected so that maximum limits, I_OHP
and I_OLP are not exceeded.
Hybrid Integrated Circuit
For Driving IGBT Modules
Description:
M57958L is a hybrid integrated
circuit designed for driving n-channel
IGBT modules in any gate amplifier
application. This device operates
as an isolation amplifier for these
modules and provides the required
electrical isolation between the in-
put and output with an opto-cou-
pler.
Features:
ٗ Built in high CMRR opto-
coupler (V_CMR : Typical
30kV/µs, Min. 15kV/µs)
ٗ Electrical Isolation between in-
put and output with opto-cou-
plers (V_iso = 2500,
V_RMS for 1 min.)
ٗ TTL compatible input interface
ٗ Two supply drive topology
ٗ Short differential of propa-
gation time (t_PLH, t_PHL to Max.
1.5µs, Typical 1.0µs)
Application:
To drive IGBT modules for inverter,
AC Servo systems, UPS, CVCF in-
verter, and welding applications.
Recommended Modules:
V_CES = 600V Series
(up to 400A Class)
V_CES = 1200V Series
(up to 200A Class)
V_CES = 1400V Series
(up to 200A Class)
Sep.1998