M54585WP Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTORS <TRANSISTOR ARRAY>
M54585WP
8-Unit 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54585WP is eight-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-
current driving with extremely low input-current supply.
FEATURES
● High breakdown voltage (BVCEO > 50V)
● High-current driving (IC(max) = 500mA)
● With clamping diodes
● Driving available with TTL output or with PMOS IC
output
APPLICATIONS
Drives of relays and printers, digit drives of indication
elements such as LEDs and lamps, and MOS-bipolar logic
IC interfaces
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
IN8→ 8
GND 9
18 →O1
17 →O2
16 →O3
15 →O4
14 →O5
OUTPUT
13 →O6
12 →O7
11 →O8
10 →COM COMMON
Package type 18P4X
FUNCTION
The M54585 is each have eight circuits, which are NPN
Darlington transistors. Input transistors have resistance of
2.7kΩbetween the base and input pin. A spikekiller
clamping diode is provided between each output pin and
GND. Output transistor emitters are all connected to the
GND pin.
Collector current is 500mA maximum. The maximum
collector-emitter voltage is 50V.
CIRCUIT DIAGRAM
2.7K
INPUT
COM
OUTPUT
7.2K
3K
GND
The eight circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit:Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75℃)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output , H
Current per circuit output, L
Ta = 25℃, when mounted on board
Ratings
Unit
– 0.5 ～ + 50
V
500
mA
– 0.5 ～ +30
V
500
mA
50
V
1.79
W
– 20 ～ + 75
℃
– 55 ～ + 125
℃
Aug-2011