M54577P Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 7 UNIT 30MA TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54577P
7-UNIT 30mA TRANSISTOR ARRAY
DESCRIPTION
M54577P is seven-circuit transistor arrays. The circuits are
made of NPN transistors. The semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
q _{Medium breakdown voltage (BVCEO ≥ 30V)}
q Output sink current (IC(max) = 30mA)
q _{Driving available with MOS (PMOS, CMOS) IC output}
q Low output saturation voltage (VCE(sat) = 0.35V at IC = 20mA)
q Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7^{→ 7}
GND ⁸
16 → O1
15 → O2
14 → O3
13 ^→ O4
OUTPUT
12 → O5
11 → O6
10 → O7
9 VCC
Package type _16P4(P)
CIRCUIT DIAGRAM
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps)
23k
INPUT
10k
VCC
OUTPUT
FUNCTION
The M54577P has seven circuits consisting of NPN transistor.
This IC uses a predriver stage with a diode and 23kΩ resistor
in series to input. The output transistor emitters are all con-
nected to the GND pin (pin 8), and VCC is connected to pin 9.
The collector current are capable of sinking 30mA maximum.
Collector-emitter supply voltage is 30V maximum.
Collector-emitter saturation voltage is below 0.35V (IC =
20mA) Drives active “H” input.
100k 22k
GND
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
IC
VI
Pd
Topr
Tstg
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
13
–0.5 ~ +30
30
–20 ~ VCC
1.47
–20 ~ +75
–55 ~ +125
Unit
V
V
mA
V
W
°C
°C
Jan.2000