M54566WP Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566WP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54566WP are seven-circuit collector-current synchro-
nized Darlington transistor arrays. The circuits are made of
PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with extre-
mely low input-current supply.
FEATURES
●High breakdown voltage (BVCEO> 50V)
●High-current driving (Ic(max) = 400mA)
●Active L-level input
PIN CONFIGURATION
INPUT
IN1→ 1
IN2→ 2
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND 8
16 →O1
15 →O2
14 →O3
13 →O4
12 →O5
11 →O6
10 →O7
9 VCC
OUTPUT
APPLICATION
Interfaces between microcomputers and high-voltage,
highcurrent
drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces
Package type 16P4X
CIRCUIT DIAGRAM
FUNCTION
The M54566 is produced by adding PNP transistors to
M54522 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kW is provided between each input and PNP
transistor base. The input emitters are connected to VCC pin
(pin 9). Output transistor emitters are all connected to the
GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter
supply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-MOS
IC output and absorb collector current.
INPUT
20K
2.7K
8K
7.2K
3K
VCC
OUTPUT
GND
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and cannot be used.
Unit:Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
IC
VI
Pd
Topr
Tstg
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
1/4
Ratings
Unit
10
V
–0.5 ～ +50
V
400
mA
–0.5 ～ VCC
V
1.47
W
–20 ～ +75
℃
–55 ～ +125
℃
'09-01