M54566P_99 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54566P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54566P and M54566FP are seven-circuit collector-current-
synchronized Darlington transistor arrays. The circuits are
made of PNP and NPN transistors. Both the semiconductor
integrated circuits perform high-current driving with ex-
tremely low input-current supply.
FEATURES
High breakdown voltage (BVCEO ≥ 50V)
High-current driving (Ic(max) = 400mA)
Active L-level input
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION


IN1→
1


IN2→
2


IN3→
3

INPUT  IN4→ 4



IN5→
5


IN6→
6

 IN7→ 7
GND 8
16
→O1


15
→O2


14
→O3



13 →O4  OUTPUT

12
→O5


11
→O6



10 →O7 
9 VCC
16P4(P)
Package type 16P2N-A(FP)
APPLICATION
Interfaces between microcomputers and high-voltage, high-
current drive systems, drives of relays and printers, and
MOS-bipolar logic IC interfaces
FUNCTION
The M54566 is produced by adding PNP transistors to
M54222 inputs. Seven circuits having active L-level inputs
are provided.
Resistance of 8kΩ is provided between each input and PNP
transistor base. The input emitters are connected to VCC pin
(pin 9). Output transistor emitters are all connected to the
GND pin (pin 8).
Collector current is 400mA maximum. Collector-emitter sup-
ply voltage is 50V maximum.
These ICs are optimal for drivers that are driven with N-MOS
IC output and absorb collector current.
The M54566FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
INPUT
20K
2.7K
8K
7.2K
3K
VCC
OUTPUT
GND
The seven circuits share the VCC and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
IC
VI
Pd
Topr
Tstg
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
10
V
–0.5 ~ +50
V
400
mA
–0.5 ~ VCC
V
1.47(P)/1.00(FP)
W
–20 ~ +75
°C
–55 ~ +125
°C
Aug. 1999