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M54539P Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54539P
6-UNIT 700mA TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54539P six-circuit transistor arrays. The circuits are made
of NPN transistors. Both the semiconductor integrated cir-
cuits perform high-current driving with extremely low input-
current supply.
FEATURES
q Medium breakdown voltage (BVCEO ≥ 20V)
q High-current driving (Ic(max) = 700mA)
q With output clamping diodes
q Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION (TOP VIEW)
NC→ 1
IN1→ 2
IN2→ 3
INPUTS
IN3→ 4
IN4→ 5
IN5→ 6
IN6→ 7
GND 8
16 →VCC
15 →O1
14 →O2
13 →O3
12 →O4
OUTPUTS
11 →O5
10 →O6
9 →COM COMMON
Outline 16P4(P)
NC : No connection
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and drives of thermal printer
FUNCTION
The M54539P have six circuits consisting of NPN transistors.
Resistance of 2kΩ is connected to the inputs. The output
transistor emitters are connected to the GND pin (pin 8). A
spick-killer clamping diode is provided between each collec-
tor and COM pin (pin 9), VCC is connected to pin 16.
The collector current is 700 mA maximum. Collector-emitter
supply voltage is 20V maximum.
CIRCUIT SCHEMATIC
2k
INPUT
200
VCC
COM
OUTPUT
20k 2k
GND
The six circuits share the VCC, COM and GND.
The diodes shown by broken line are parasite diodes and must
not be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
IC
VI
VR
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Clamping diode reverse voltage
IF
Clamping diode forward current
Conditions
Output, H
Current per circuit output, L
Pulse Width ≤ 35ms, Duty Cycle ≤ 5%
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
Ta = 25°C, when mounted on board
Ratings
10
–0.5 ~ +20
700
–0.5 ~ +10
20
700
350
1.47
–20 ~ +75
–55 ~ +125
Unit
V
V
mA
V
V
mA
W
°C
°C
Aug. 1999