M54534P Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54534P/FP
6-UNIT 320mA TRANSISTOR ARRAY WITH CLAMP DIODE AND STROBE
DESCRIPTION
M54534P and M54534FP are six-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
q Medium breakdown voltage (BVCEO ≥ 20V)
q _{High-current driving (Ic(max) =320mA)}
q _{With clamping diodes}
q _{Wide input voltage range (VI = –25 to +20V)}
q _{Wide operating temperature range (Ta = –20 to +75°C)}
q With strobe input
PIN CONFIGURATION (TOP VIEW)
STROBE INPUT STB→ 1
IN1→ 2
IN2→ 3
IN3→ 4
INPUT
IN4→ 5
IN5→ 6
IN6→ 7
GND 8
16 VCC
15 →O1
14 →O2
13 →O3
OUTPUT
12 →O4
11 →O5
10 →O6
9 COM COMMON
16P4(P)
Outline 16P2N-A(FP)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps).
FUNCTION
The M54534P and M54534FP each have six circuits consist-
ing of NPN transistors. Each input has a diode and 1.6kΩ
esistor in series. Each input is connected, and each output
is connected spike-killer clamping diode, emitters of each
transistor is connected to GND (pin 8), strobe input is con-
nected to (pin 1), clamping diode is connected COM pin (pin
9) and VCC is connected to the pin 16 in common.
The collector current is 320mA maximum. Collector-emitter
supply voltage is 20V maximum.
M54534FP is enclosed in a molded small flat package, en-
abling space-saving design.
CIRCUIT SCHEMATIC (EACH CIRCUIT)
380
VCC
1.6k
INPUT
COM
OUTPUT
20k
2k
STB
STROBE INPUT
GND
The six circuits share the STB, COM, VCC, GND.
The diodes shown by broken line are parasite diodes and must not
be use.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCC
VCEO
IC
VI
V(STB)
IF
VR
Pd
Topr
Tstg
Parameter
Supply voltage
Collector-emitter voltage
Collector current
Input voltage
Strobe input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
10
–0.5 ~ +20
320
–25 ~ +20
–0.5~ +20
320
20
1.47/1.00
–20 ~ +75
–55 ~ +125
Unit
V
V
mA
V
V
mA
V
W
°C
°C
Aug.1999