M54531WP Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531WP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54531WP are seven-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors. Both
the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
FEATURES
●High breakdown voltage (BVCEO≧40V)
●High-current driving (Ic(max) = 400mA)
●With clamping diodes
●Driving available with PMOS IC output
●Wide input voltage range (VI = –40 to +40V)
PIN CONFIGURATION
IN1→ 1
IN2→ 2
IN3→ 3
INPUT IN4→ 4
IN5→ 5
IN6→ 6
IN7→ 7
GND 8
16 →O1
15 →O2
14 →O3
13 →O4 OUTPUT
12 →O5
11 →O6
10 →O7
9 →COM COMMON
APPLICATION
Drives of relays and printers, digit drives of indication
elements (LEDs and lamps), and MOS-bipolar logic IC
interfaces
FUNCTION
The M54531WP each have seven circuits consisting of NPN
Darlington transistors. A serial circuit including a diode and
resistance of 20kΩ is provided between input transistor
bases and input pins. A spike-killer clamping diode is
provided between each output pin (collector) and COM pin
(pin 9). The output transistor emitters are all connected to
the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
Package type 16P4X
CIRCUIT DIAGRAM
20K
INPUT
COM
OUTPUT
20K
2K
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot be used.
Unit:Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ～ +75℃)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25℃, when mounted on board
1/4
Ratings
Unit
–0.5 ～ +40
V
400
mA
–40 ～ +40
V
400
mA
40
V
1.47
W
–20 ～ +75
℃
–55 ～ +125
℃
'09-03