M54531P_99 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54531P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54531P and M54531FP are seven-circuit Darlington tran-
sistor arrays with clamping diodes. The circuits are made of
NPN transistors. Both the semiconductor integrated circuits
perform high-current driving with extremely low input-current
supply.
FEATURES
High breakdown voltage (BVCEO ≥ 40V)
High-current driving (Ic(max) = 400mA)
With clamping diodes
Driving available with PMOS IC output
Wide input voltage range (VI = –40 to +40V)
Wide operating temperature range (Ta = –20 to +75°C)
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54531P and M54531FP each have seven circuits con-
sisting of NPN Darlington transistors. A serial circuit includ-
ing a diode and resistance of 20kΩ is provided between in-
put transistor bases and input pins. A spike-killer clamping
diode is provided between each output pin (collector) and
COM pin (pin 9). The output transistor emitters are all con-
nected to the GND pin (pin 8).
The collector current is 400mA maximum. Collector-emitter
supply voltage is 40V maximum.
The M54531FP is enclosed in a molded small flat package,
enabling space-saving design.
PIN CONFIGURATION


IN1→
1


IN2→
2


IN3→
3

INPUT 

IN4→
4


IN5→
5


IN6→
6

 IN7→ 7
GND 8
16
→O1


15
→O2


14
→O3



13
→O4
 OUTPUT

12
→O5


11
→O6



10 →O7 
9 →COM COMMON
16P4(P)
Package type 16P2N-A(FP)
CIRCUIT DIAGRAM
20K
INPUT
COM
OUTPUT
20K
2K
GND
The seven circuits share the COM and GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
–0.5 ~ +40
V
400
mA
–40 ~ +40
V
400
mA
40
V
1.47(P)/1.00(FP)
W
–20 ~ +75
°C
–55 ~ +125
°C
Aug. 1999