M54527P Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54527P
6-UNIT 150mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M54527P is six-circuit Darlington transistor arrays with
clamping diodes. The circuits are made of NPN transistors.
Both the semiconductor integrated circuits perform high-cur-
rent driving with extremely low input-current supply.
FEATURES
q _{High breakdown voltage (BVCEO ≥ 40V)}
q _{High-current driving (Ic(max) = 150mA)}
q _{With clamping diodes}
q _{Driving available with PMOS IC output of 8-18V}
q Wide input voltage range (VI = –40 to +40V)
q _{Wide operating temperature range (Ta = –20 to +75°C)}
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54527P have six circuits consisting of NPN Darlington
transistors. These ICs have resistance of 20kΩ between in-
put transistor bases and input pins. A spike-killer clamping
diode is provided between each output pin (collector) and
COM pin (pin 8). The output transistor emitters are all con-
nected to the GND pin (pin 7).
The collector current is150mA maximum. Collector-emitter
supply voltage is 40V maximum.
PIN CONFIGURATION (TOP VIEW)
IN1→ 1
IN2→ 2
INPUTS
IN3→ 3
IN4→ 4
IN5→ 5
IN6→ 6
GND 7
14 →O1
13 →O2
12 →O3
OUTPUTS
11 →O4
10 →O5
9 →O6
8 →COM COMMON
Outline 14P4
CIRCUIT SCHEMATIC
20k
INPUT
COM
OUTPUT
20k
2k
GND
The six circuits share the COM and GND.
The diodes shown by broken line are parasite diodes and must
not be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
IF
VR
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
–0.5 ~ +40
150
–40 ~ +40
150
40
1.47
–20 ~ +75
–55 ~ +125
Unit
V
mA
V
mA
V
W
°C
°C
Aug. 1999