M54519P Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – 7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54519P/FP
7-UNIT 400mA DARLINGTON TRANSISTOR ARRAY
DESCRIPTION
M54519P and M54519FP are seven-circuit Darlington tran-
sistor arrays. The circuits are made of NPN transistors. Both
the semiconductor integrated circuits perform high-current
driving with extremely low input-current supply.
FEATURES
High breakdown voltage (BVCEO ≥ 40V)
High-current driving (Ic(max) = 400mA)
Driving available with PMOS IC output
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION


IN1→
1


IN2→
2

 ^{IN3→ 3}

INPUT  IN4→ 4



IN5→
5


IN6→
6

 IN7→ 7
GND 8
16
→O1


15
→O2



14 →O3 _

13 →O4  OUTPUT

12
→O5


11
→O6



10 →O7 
9 NC
16P4(P)
Package type 16P2N-A(FP) NC : No connection
APPLICATION
Drives of relays and printers, digit drives of indication ele-
ments (LEDs and lamps), and MOS-bipolar logic IC inter-
faces
FUNCTION
The M54519P and M54519FP each have seven circuits con-
sisting of NPN Darlington transistors. These ICs have resis-
tance of 20kΩ between input transistor bases and input pins.
The output transistor emitters are all connected to the GND
pin (pin 8).
Collector current is 400mA maximum. Collector-emitter sup-
ply voltage is 40V maximum.
The M54519FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
20K
INPUT
OUTPUT
20K
2K
GND
The seven circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75°C)
Symbol
VCEO
IC
VI
Pd
Topr
Tstg
Parameter
Collector-emitter voltage
Collector current
Input voltage
Power dissipation
Operating temperature
Storage temperature
Conditions
Output, H
Current per circuit output, L
Ta = 25°C, when mounted on board
Ratings
Unit
–0.5 ~ +40
V
400
mA
–0.5 ~ +40
V
1.47(P)/1.00(FP)
W
–20 ~ +75
°C
–55 ~ +125
°C
Aug. 1999