M54513P_11 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 50mA TRANSISTOR ARRAY

MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54513P/FP
8-UNIT 50mA TRANSISTOR ARRAY
DESCRIPTION
M54513P and M54513FP are eight-circuit transistor arrays.
The circuits are made of NPN transistors. Both the semicon-
ductor integrated circuits perform high-current driving with
extremely low input-current supply.
FEATURES
High breakdown voltage (BVCEO ≥ 40V)
Synchronizing current (Ic(max) = 50mA)
Wide operating temperature range (Ta = –20 to +75°C)
PIN CONFIGURATION


IN1→
1


IN2→
2

 ^{IN3→ 3}


INPUT 
IN4→
4


IN5→
5


IN6→
6

 IN7→ 7

 IN8→ ₈
GND 9
18
→O1


17
→O2



16 →O3 _

15
→O4

 OUTPUT
14
→O5


13
→O6



12 →O7 

11 →O8 ^
10 NC
Package type 18P4G(P) NC : No connection
APPLICATION
Driving of digit drives of indication elements (LEDs and
lamps) with small signals
FUNCTION
The M54513P and M54513FP each have eight circuits con-
sisting of NPN transistors. These ICs have resistance of 2
kΩ at inputs and of 13.6kΩ between the base and emitter.
The GND is used in common in each circuit.
The transistors allow synchronous flow of 50mA collector
current. A maximum of 40V voltage can be applied between
the collector and emitter.
The M54513FP is enclosed in a molded small flat package,
enabling space-saving design.
NC 1


IN1→
2


IN2→
3

 ^{IN3→ 4}


INPUT 
IN4→
5


IN5→
6


IN6→
7

 IN7→ 8

 _{IN8→ 9}
GND 10
20 NC
19
→O1


18
→O2



17 →O3 _

16 →O4 
 OUTPUT
15
→O5


14
→O6



13 →O7 

12 →O8 ^
11 NC
Package type 20P2N-A(FP) NC : No connection
CIRCUIT DIAGRAM
2K
INPUT
OUTPUT
13.6K
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit : Ω
Aug. 1999