M54513FP Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – 8-UNIT 50mA TRANSISTOR ARRAY SINK TYPE

<TRANSISTOR ARRAY>
M54513FP
8-UNIT 50mA TRANSISTOR ARRAY
SINK TYPE
DESCRIPTION
M54513FP are eight-circuit transistor arrays. The circuits are
made of NPN transistors. Both the semicon- ductor integrated
circuits perform high-current driving with extremely low input-
current supply.
FEATURES
• High breakdown voltage （BVCEO ≧ 40V）
• Synchronizing current (Ic(max) = 50mA)
APPLICATION
Driving of digit drives of indication elements (LEDs and lamps)
with small signals
FUNCTION
The M54513FP each have eight circuits consisting of NPN
transistors. These ICs have resistance of 2kΩ at inputs and of
13.6kΩ between the base and emitter. The GND is used in
common in each circuit.
The transistors allow synchronous flow of 50mA collector
current. A maximum of 40V voltage can be applied between
the collector and emitter.
PIN CONFIGURATION
INPUT
NC 1 ^○
IN1→ 2
IN2→ 3
IN3→ 4
IN4→ 5
IN5→ 6
IN6→ 7
IN7→ 8
IN8→ 9
GND 10
20 NC
19 →O1
18 →O2
17 →O3
16 →O4
15 →O5
14 →O6
13 →O7
12 →O8
11 NC
OUTPUT
Package type 20P2N-A
NC : No connection
CIRCUIT DIAGRAM
INPUT
2K
13.6K
OUTPUT
GND
The eight circuits share the GND.
The diode, indicated with the dotted line, is parasitic, and
cannot be used.
Unit :Ω
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75 C)
Symbol
Parameter
Conditions
VCEO
Collector-emitter voltage
Output, H
VI
Input voltage
IC
Collector current
Pd
Power dissipation
Topr
Operating temperature
Tstg
Storage temperature
Current per circuit output, L
Ta = 25 C, when mounted on board
Ratings
Unit
–0.5 ～ +40
V
-0.5 ～ +10
V
50
mA
1.10
W
–20 ～ +75
℃
–55 ～ +125
℃
2012.May
1