M38B79MFH Datasheet, PDF (1/109 Pages) Mitsubishi Electric Semiconductor – SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER

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MITSUBISHI MICROCOMPUTERS
38B7 Group
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER
DESCRIPTION
The 38B7 group is the 8-bit microcomputer based on the 740 family
core technology.
The 38B7 group has six 8-bit timers, one 16-bit timer, a fluorescent
display automatic display circuit, 16-channel 10-bit A-D converter, a
serial I/O with automatic transfer function, which are available for
controlling musical instruments and household appliances.
The 38B7 group has variations of internal memory type. For details,
refer to the section on part numbering.
For details on availability of microcomputers in the 38B7 group, refer
to the section on group expansion.
Built-in pull-down resistors connected to high-breakdown voltage ports
are available by specifying with the mask option in the mask ROM
version. For the details, refer to the section on the mask option of
pull-down resistor.
FEATURES
<Microcomputer mode>
• ^{Basic machine-language instructions ....................................... 71}
• ^{The minimum instruction execution time .......................... 0.48 µs}
(at 4.19 MHz oscillation frequency)
• ^{Memory size}
ROM ........................................................ 60K bytes
RAM .......................................................2048 bytes
• ^{Programmable input/output ports ............................................. 75}
• ^{High-breakdown-voltage output ports ...................................... 52}
• ^{Software pull-up resistors . (Ports P64 to P67, P7, P80 to P83, P9,}
PA, PB)
• ^{Interrupts .................................................. 22 sources, 16 vectors}
• ^{Timers ........................................................... 8-bit ✕ 6, 16-bit ✕ 1}
• ^{Serial I/O1 (Clock-synchronized) ................................... 8-bit ✕ 1}
(max. 256-byte automatic transfer function)
• ^{Serial I/O2 (UART or Clock-synchronized) .................... 8-bit ✕ 1}
• ^{Serial I/O3 (Clock-synchronized) ................................... 8-bit ✕ 1}
• ^{PWM ............................................................................ 14-bit ✕ 1}
8-bit ✕ 1 (also functions as timer 6)
• ^{A-D converter .............................................. 10-bit ✕ 16 channels}
• ^{D-A converter ................................................................ 1 channel}
• ^{Fluorescent display function ......................... Total 56 control pins}
• ^{Interrupt interval determination function ..................................... 1}
(Serviceable even in low-speed mode)
• ^{Watchdog timer ............................................................ 16-bit ✕ 1}
• ^{Buzzer output ............................................................................. 1}
• ^{Two clock generating circuits}
Main clock (XIN–XOUT) .......................... Internal feedback resistor
Sub-clock (XCIN–XCOUT) .......... Without internal feedback resistor
(connect to external ceramic resonator or quartz-crystal oscillator)
• ^{Power source voltage}
In high-speed mode ................................................... 4.0 to 5.5 V
(at 4.19 MHz oscillation frequency and high-speed selected)
In middle-speed mode ........................................... 2.7 to 5.5 V (*)
(at 4.19 MHz oscillation frequency and middle-speed selected)
In low-speed mode ................................................ 2.7 to 5.5 V (*)
(at 32 kHz oscillation frequency)
(*: 4.0 to 5.5 V for Flash memory version)
• ^{Power dissipation}
In high-speed mode .......................................................... 35 mW
(at 4.19 MHz oscillation frequency)
In low-speed mode ............................................................. 60 µW
(at 32 kHz oscillation frequency, at 3 V power source voltage)
• ^{Operating temperature range ................................... –20 to 85 °C}
<Flash memory mode>
qSupply voltage ................................................. VCC = 5 V ± 10 %
qProgram/Erase voltage ............................... VPP = 11.7 to 12.6 V
qProgramming method ...................... Programming in unit of byte
qErasing method
Batch erasing ........................................ Parallel/Serial I/O mode
Block erasing .................................... CPU reprogramming mode
qProgram/Erase control by software command
qNumber of times for programming/erasing ............................ 100
qOperating temperature range (at programming/erasing)
..................................................................... Normal temperature
sNotes
1. The flash memory version cannot be used for application em-
bedded in the MCU card.
2. Power source voltage Vcc of the flash memory version is 4.0
to 5.5 V.
APPLICATION
Musical instruments, VCR, household appliances, etc.
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