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FY3ABJ-03 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE | |||
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FY3ABJ-03
MITSUBISHI Pch POWER MOSFET
FY3ABJ-03
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
Â
Â
Dimensions in mm
q 4V DRIVE
q VDSS ............................................................................... â30V
q rDS (ON) (MAX) ............................................................. 70mâ¦
q ID ......................................................................................... â3A
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
Â
Â
5.0
1.8 MAX.
0.4
1.27
ÂÂ
Â
ÂÂÂÂ
  SOURCE
 GATE
    DRAIN
 No-contact
SOP-8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
â
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
â30
±20
â3
â21
â3
â1.7
â6.8
1.8
â55 ~ +150
â55 ~ +150
0.07
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Sep.1998
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