FX20VSJ-3 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

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FX20VSJ-3
MITSUBISHI Pch POWER MOSFET
FX20VSJ-3
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
4
10.5 max
Dimensions in mm
4.5
1.3
0
+0.3
–0
1
5
B
0.5
0.8
• 4V DRIVE
• VDSS ............................................................ –150V
• rDS (ON) (MAX) ................................................ 0.29Ω
• ID ................................................................... –20A
• Integrated Fast Recovery Diode (TYP.) ........ 100ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
123
3
1 GATE
1
2 DRAIN
3 SOURCE
4 DRAIN
24
TO-220S
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 30µH
Typical value
Conditions
Ratings
–150
±20
–20
–80
–20
–20
–80
70
–55 ~ +150
–55 ~ +150
1.2
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Jan.1999