FS30AS-2 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH-SPEED SWITCHING USE

FS30AS-2
MITSUBISHI Nch POWER MOSFET
FS30AS-2
HIGH-SPEED SWITCHING USE
OUTLINE DRAWING
6.5
5.0 ± 0.2
r
Dimensions in mm
0.5 ± 0.1
¡10V DRIVE
¡VDSS ................................................................................ 100V
¡rDS (ON) (MAX) ........................................................... 100mΩ
¡ID ......................................................................................... 30A
¡Integrated Fast Recovery Diode (TYP.) ............. 95ns
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
1.0
0.9MAX.
2.3 2.3
A
0.5 ± 0.2
0.8
qwe
wr
q
e
q GATE
w DRAIN
e SOURCE
r DRAIN
MP-3
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 100µH
Typical value
Conditions
Ratings
100
±20
30
120
30
30
120
35
–55 ~ +150
–55 ~ +150
0.26
Unit
V
V
A
A
A
A
A
W
°C
°C
g
Feb.1999