FD500JV-90DA_02 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE

FD500JV-90DA
MITSUBISHI SOFT RECOVERY DIODE
FD500JV-90DA
HIGH POWER, HIGH FREQUENCY
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
φ3.5 ± 0.2
2.2 ± 0.2DEPTH
TYPE NAME
¡VRRM Repetitive peak reverse voltage ................... 4500V
¡IT(AV) Average on-state current ...................... 500A
φ47
φ75MAX
φ3.5 ± 0.2
2.2 ± 0.2DEPTH
APPLICATION
High-power inverters
Clamp diode for GCT Thyristor
Power supplies as high frequency rectifiers
MAXIMUM RATINGS
Symbol
Parameter
Conditions
Voltage class
VRRM
Repetitive peak reverse voltage
—
VRSM
Non-repetitive peak reverse voltage
—
VR(DC) DC reverse voltage
—
4500
4500
3600
Symbol
IF(RMS)
IF(AV)
IFSM
I²t
di/dt
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Operation junction temperature
Storage temperature
Mounting force required
Weight
Conditions
Applied for all condition angles
f = 60Hz, sinewave θ = 180°, Tf =76°C
One half cycle at 60Hz, Tj =125°C start
IFM =500A, VR = 2250V, Tj = 25/125°C (See Fig. 1, 2)
(Recommended value 23.5kN)
Typical value 530g
Ratings
785
500
10
4.2× 10⁵
2000
–20 ~ 125
–40 ~ 150
22 ~ 28
—
Unit
V
V
V
Unit
A
A
kA
A²s
A/µs
°C
°C
kN
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Min.
VFM
Forward voltage
IFM = 1570A, Tj = 125°C
—
IRRM
Repetitive peak reverse current VRM = 4500V, Tj = 125°C
—
QRR
Erec
Reverse recovery charge
Reverse recovery energy
IFM = 500A, di/dt = 1000A/µs, VR = 2250V, Tj = 125°C
—
(See Fig. 1, 2) —
Rth(j-f)
Thermal resistance
Junction to Fin
—
Limits
Unit
Typ. Max.
—
3.5
V
—
80
mA
—
1500 µC
4
—
J/P
—
0.027 K/W
Jul. 2002