FD2000DU-120 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE

FD2000DU-120
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD2000DU-120
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimension in mm
CATHODE
φ 190 max
φ 130 ± 0.2
φ 3.6 ± 0.2 DEPTH
2.2 ± 0.2
q IF(AV) Average forward current .....................1700A
q VRRM Repetitive peak reverse voltage ..........6000V
q QRR Reverse recovery charge ................. 1500µC
q Press pack type
TYPE
NAME
ANODE
φ 130 ± 0.2
φ 190 max
φ 3.6 ± 0.2 DEPTH
2.2 ± 0.2
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Voltage class
120
6000
6000
4800
Symbol
IF(RMS)
IF(AV)
IFSM
I²t
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 65°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 108
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 6300A, Instantaneous measurememt
IFM = 2000A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
Unit
V
V
V
Ratings
Unit
2670
A
1700
A
40
kA
6.7 × 10⁶
A²s
–40 ~ +125
°C
–40 ~ +150
°C
98 ~ 118
kN
4600
g
Limits
Unit
Min
Typ
Max
—
—
300 mA
—
—
5.0 V
—
—
1500 µC
—
—
0.009 °C/W
Aug.1998