FD1500AV-90 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE

FD1500AV-90
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1500AV-90
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
9
¶40
φ 3.5 DEPTH 2.2 ± 0.2
φ 70
CATHODE
q IF(AV) Average forward current ......................1500A
q VRRM Repetitive peak reverse voltage ....... 3500 ~ 4500V
q QRR Reverse recovery charge ................. 2000µC
q Press pack type
TYPE
NAME
ANODE
φ 70
φ 120 MAX
φ 3.5 DEPTH 2.2 ± 0.2
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
70
3500
3500
2800
Voltage class
80
4000
4000
3200
Symbol
IF(RMS)
IF(AV)
IFSM
I²t
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 65°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 49
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 3400A, Instantaneous measurement
IFM = 1200A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
Unit
90
4500
V
4500
V
3600
V
Ratings
Unit
2350
A
1500
A
24
kA
2.4 × 10⁶
A²s
–40 ~ +125
°C
–40 ~ +150
°C
44.1 ~ 58.8
kN
1270
g
Limits
Unit
Min
Typ
Max
—
—
150 mA
—
—
3.0 V
—
—
2000 µC
—
—
0.013 °C/W
Aug.1998