FD1500AU-120DA Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – HIGH POWER, HIGH FREQUENCY PRESS PACK TYPE

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FD1500AU-120DA
MITSUBISHI SOFT RECOVERY DIODE
FD1500AU-120DA
HIGH POWER, HIGH FREQUENCY
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
¡VRRM Repetitive peak reverse voltage ................... 6000V
¡IT(AV) Average on-state current .................... 1200A
φ3.5 ± 0.2
2.2 ± 0.2DEPTH
φ85 ± 0.2
φ85 ± 0.2
φ120MAX
6.35 × 10.8
TYPE NAME
12 ± 2
φ3.5 ± 0.2
2.2 ± 0.2DEPTH
APPLICATION
High-power inverters
Fly-hweel diode for GCT Thyristor
Power supplies as high frequency rectifiers
MAXIMUM RATINGS
Symbol
Parameter
Conditions
Voltage class
VRRM
VRSM
VR(DC)
V(LTDS)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Long term DC stability voltage
—
—
—
λ = 100Fit
6000
6000
4800
3200
Symbol
IF(RMS)
IF(AV)
IFSM
I²t
di/dt
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Critical rate of rise of reverse
recovery current
Operation junction temperature
Storage temperature
Mounting force required
Weight
Conditions
Applied for all condition angles
f = 60Hz, sinewave θ = 180°, Tf =74°C
One half cycle at 60Hz, Tj =125°C start
IFM =1500A, VR = 3000V, Tj = 25/125°C
CC =6µF, LC = 0.3µH
(See Fig. 1, 2)
(Recommended value 47kN)
Typical value 1450g
Ratings
1900
1200
26
2.8× 10⁶
1000
–40 ~ 125
–40 ~ 150
39 ~ 55
—
Unit
V
V
V
V
Unit
A
A
kA
A²s
A/µs
°C
°C
kN
g
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
Min.
VFM
Forward voltage
IFM = 3400A, Tj = 125°C
—
IRRM
Repetitive peak reverse current VRM = 6000V, Tj = 125°C
—
QRR
Reverse recovery charge
IFM = 1500A, di/dt = 1000A/µs, VR = 3000V, Tj = 125°C
—
Erec
Reverse recovery energy
CC = 6µF, LC = 0.3µH
(See Fig. 1, 2) —
Rth(j-f)
Thermal resistance
Junction to Fin
—
Limits
Typ.
—
—
—
—
—
Unit
Max.
5
V
150 mA
5400 µC
9.4
J/P
0.0071 K/W
Jul. 2002