FD1000FX-90 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE

FD1000FX-90
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FX-90
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
R4
9
`'39
CATHODE
φ 60
q IF(AV) Average forward current ........................800A
q VRRM Repetitive peak reverse voltage ....................4500V
q QRR Reverse recovery charge ................. 2000µC
q Press pack type
TYPE
NAME
ANODE
φ 60
φ 102 MAX
M5 ! 0.8
DEPTH 2.5
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
VLTDS
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Long term DC stability
Voltage class
90
4500
4500
3600
3000
Symbol
IF(RMS)
IF(AV)
IFSM
I²t
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 77°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 39
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 2500A, Instantaneous measurement
IFM = 800A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
Unit
V
V
V
V
Ratings
Unit
1250
A
800
A
20
kA
1.7 ! 10⁶
A²s
–40 ~ +125
°C
–40 ~ +150
°C
26.5 ~ 43.0
kN
700
g
Limits
Unit
Min
Typ
Max
—
—
150 mA
—
—
3.5 V
—
—
2000 µC
—
—
0.017 °C/W
Aug.1998