FD1000FH-56 Datasheet, PDF (1/3 Pages) Mitsubishi Electric Semiconductor – HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE

FD1000FH-56
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES
FD1000FH-56
HIGH POWER, HIGH FREQUENCY,
PRESS PACK TYPE
OUTLINE DRAWING
Dimensions in mm
R4
9
‘38
CATHODE
φ 50
q IF(AV) Average forward current ......................1000A
q VRRM Repetitive peak reverse voltage ....... 2500V, 2800V
q QRR Reverse recovery charge ................. 1000µC
q Press pack type
TYPE
NAME
ANODE
φ 50
φ 92 MAX
M5 × 0.8
DEPTH 2.5
APPLICATION
High-power inverters, Fly-wheel diodes in DC choppers, Power supplies as high frequency
rectifiers
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR(DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
50
2500
2800
2000
Voltage class
Symbol
IF(RMS)
IF(AV)
IFSM
I²t
Tj
Tstg
—
—
Parameter
RMS forward current
Average forward current
Surge forward current
Current-squared, time integration
Junction temperature
Storage temperature
Mounting force required
Weight
Conditions
f = 60Hz, sine wave θ = 180°, Tf = 79°C
One half cycle at 60Hz, non-repetitive
One cycle at 60Hz
Recommended value 29.4
Standard value
ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Test conditions
IRRM
VFM
QRR
Rth(j-f)
Repetitive peak reverse current
Forward voltage
Reverse recovery charge
Thermal resistance
Tj = 125°C, VRRM Applied
Tj = 125°C, IFM = 2500A, Instantaneous measurement
IFM = 1000A, diF/dt = –30A/µs, VR = 150V,
Tj = 125°C
Junction to fin
Unit
56
2800
V
3100
V
2240
V
Ratings
Unit
1570
A
1000
A
25
kA
2.6 × 10⁵
A²s
–40 ~ +125
°C
–40 ~ +150
°C
26.5 ~ 35.3
kN
g
Limits
Unit
Min
Typ
Max
—
—
80 mA
—
—
1.9 V
—
—
1000 µC
—
—
0.025 °C/W
Aug.1998