CT25ASJ-8 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – STROBE FLASHER USE

CT25ASJ-8
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT25ASJ-8
STROBE FLASHER USE
OUTLINE DRAWING
6.5
5.0 ± 0.2
4
Dimensions in mm
0.5 ± 0.1
¡VCES ................................................................................ 400V
¡ICM .................................................................................... 150A
¡Drive Voltage
VGE=4V
¡Small Package
MP-3
APPLICATION
Strobe Flasher.
1.0
0.9MAX.
2.3 2.3
0.5 ± 0.2
0.8
123
wr
q GATE
q
w COLLECTOR
e EMITTER
r COLLECTOR
e
MP-3
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VCES
VGES
VGEM
ICM
Tj
Tstg
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
VGE = 0V
See figure 1
Conditions
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
V(BR)CES
ICES
IGES
VGE(th)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE = ±6V, VCE = 0V
VCE = 10V, IC = 1mA
Ratings
Unit
400
V
±6
V
±8
V
150
A
–40 ~ +150
°C
–40 ~ +150
°C
Limits
Unit
Min.
Typ. Max.
450
—
—
V
—
—
10
µA
—
—
±0.1 µA
—
—
1.5
V
Feb.1999