CT20VML-8 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – STROBE FLASHER USE

CT20VML-8
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR
CT20VML-8
STROBE FLASHER USE
OUTLINE DRAWING
10.5MAX.
r
Dimensions in mm
1.3
1
¡VCES ................................................................................ 400V
¡ICM .................................................................................... 130A
APPLICATION
Strobe Flasher.
0.5
0.5
2.5
2.5
qwe
wr
q GATE
q
w COLLECTOR
e EMITTER
r COLLECTOR
e
TO-220C
MAXIMUM RATINGS (Tc = 25°C)
Symbol
VCES
VGES
VGEM
ICM
Tj
Tstg
Parameter
Collector-emitter voltage
Gate-emitter voltage
Peak gate-emitter voltage
Collector current (Pulsed)
Junction temperature
Storage temperature
Conditions
VGE = 0V
VCE = 0V, See notice 4
VCE = 0V, tw = 10s
See figure 1
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Symbol
Parameter
Test conditions
V(BR)CES
ICES
IGES
VGE(th)
Collector-emitter breakdown voltage
Collector-emitter leakage current
Gate-emitter leakage current
Gate-emitter threshold voltage
IC = 1mA, VGE = 0V
VCE = 400V, VGE = 0V
VGE = ±16V, VCE = 0V
VCE = 10V, IC = 1mA
Ratings
Unit
400
V
±15
V
±16
V
130
A
–40 ~ +150
°C
–40 ~ +150
°C
Limits
Unit
Min.
Typ. Max.
450
—
—
V
—
—
10
µA
—
—
±0.1 µA
0.5
—
2.0
V
Feb.1999