CR5AS Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR5AS
OUTLINE DRAWING
Dimensions
in mm
TYPE
NAME
6.5
5.0±0.2
4
∗
VOLTAGE
CLASS
0.5±0.1
• IT (AV) ........................................................................... 5A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 200µA
0.9 MAX
1.0
2.3 2.3
0.5±0.2
0.8
∗ Measurement point of
case temperature
123
24
3
1
1 CATHODE
2 ANODE
3 GATE
4 ANODE
MP-3
APPLICATION
Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for
autocycle, electric tools, other general purpose control applications, strobe flasher
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
720
V
VR (DC)
DC reverse voltage
320
VDRM
Repetitive peak off-state voltage ^V1
400
VD (DC)
DC off-state voltage
V1
320
480
V
600
V
480
V
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. With Gate-to-cathode resistance RGK=220Ω
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=88°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
7.8
A
5
A
90
A
33
A²s
0.5
W
0.1
W
6
V
6
V
0.3
A
–40 ~ +125
°C
–40 ~ +125
°C
0.26
g
Feb.1999