CR3PM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE

CR3PM
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR3PM
LOW POWER USE
INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
• IT (AV) ........................................................................... 3A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
2.54
2.54
0.5
2.6
2
3
1
123
∗ Measurement point of
case temperature
1 CATHODE
2 ANODE
3 GATE
TO-220F
APPLICATION
TV sets, control of household equipment such as electric blankets, other general purpose control
applications
MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)
Symbol
Parameter
Voltage class
Unit
8
12
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
720
V
VR (DC)
DC reverse voltage
320
VDRM
Repetitive peak off-state voltage ^V1
400
VD (DC)
DC off-state voltage
V1
320
480
V
600
V
480
V
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Viso
Isolation voltage
V1. With gate to cathode resistance RGK=220Ω.
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=103°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ta=25°C, AC 1 minute, each terminal to case
Ratings
Unit
4.7
A
3.0
A
70
A
24.5
A²s
0.5
W
0.1
W
6
V
6
V
0.3
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
1500
V
Feb.1999