CR3JM Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR3JM
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR3JM
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
4
Dimensions
in mm
4.5
1.3
TYPE
NAME
VOLTAGE
CLASS
∗
φ3.6±0.2
1.0
0.8
2.5
2.5
0.5
2.6
• IT (AV) ........................................................................ 0.8A
• VDRM ....................................................................... 400V
• IGT ..........................................................................50mA
APPLICATION
Automatic strobe flasher
24
3
1
1 2 3 _{∗ Measurement point of}
case temperature
1 CATHODE
2 ANODE
3 GATE
4 ANODE
TO-220
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VDRM
VDSM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Voltage class
8
400
480
400
480
Symbol
Parameter
Conditions
IT (AV)
ITRM
Average on-state current
Repetitive peak on-state current ^V1
Commercial frequency, sine half wave, 180° conduction, Ta=37°C
CM=1800µF with discharge current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Typical value
V1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION.
Unit
V
V
V
V
Ratings
Unit
0.8
A
240
A
3.0
W
0.3
W
6
V
6
V
1
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
Feb.1999