CR3AMZ Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – LOW POWER, STROBE USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR3AMZ
LOW POWER, STROBE USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR3AMZ
OUTLINE DRAWING
TYPE NAME
VOLTAGE
CLASS
Dimensions
in mm
• IT (AV) ........................................................................ 0.4A
• VDRM ....................................................................... 400V
• IGT ..........................................................................30mA
APPLICATION
Automatic strobe flasher
1.2±0.1
0.8
0.8
0.5
1.5 MIN
2.5 2.5
123
10 MAX
2
3
1
1 CATHODE
2 ANODE
3 GATE
TO-202
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VDRM
VDSM
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Repetitive peak off-state voltage
Non-repetitive peak off-state voltage
Voltage class
8
400
480
400
480
Symbol
Parameter
Conditions
IT (AV)
ITRM
Average on-state current
Repetitive peak on-state current ^V1
Commercial frequency, sine half wave, 180° conduction,
CM=700µF with discharge current
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Typical value
V1. Refer to sections 1, 2 on STROBE FLASHER APPLICATION shown in the last sheet for CR3JM.
Unit
V
V
V
V
Ratings
Unit
0.4
A
200
A
0.5
W
0.1
W
6
V
0.5
A
–40 ~ +125
°C
–40 ~ +125
°C
1.1
g
Feb.1999