CR20EY Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER, INVERTER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR20EY
MITSUBISHI SEMICONDUCTOR 〈HIGH-SPEED SWITCHING THYRISTOR〉
CR20EY
MEDIUM POWER, INVERTER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
• IT (AV) ......................................................................... 20A
• VDRM .................................................... 400V/600V/800V
• IGT ..........................................................................50mA
3
2
(22)
1
1
φ3.5 1.6
3
3
φ1.5
2
1 CATHODE
φ14
2 ANODE
3 GATE
TYPE NAME
2
M6×1
LOCK WASHER
NUT
SOLDERLESS TERMINAL
 TELEGRAPH WIRE
 2.63~6.64mm² 
Note: Mica washer and spacer are
provided only upon request.
APPLICATION
Inverter, DC choppers, pulse generator
MAXIMUM RATINGS
Symbol
Parameter
8
VRRM
Repetitive peak reverse voltage
400
VRSM
Non-repetitive peak reverse voltage
480
VDRM
Repetitive peak off-state voltage
400
VDSM
Non-repetitive peak off-state voltage
480
Voltage class
12
600
720
600
720
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=74°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
VD=1/2VDRM, ITM=60A, IG=0.1A, Tj=25°C, f=60Hz
—
Mounting torque
—
Weight
Typical value
Unit
16
800
V
850
V
800
V
800
V
Ratings
31.5
20
300
380
100
5.0
0.5
10
5
2
–30 ~ +125
–30 ~ +125
30
2.94
20
Unit
A
A
A
A²s
A/µs
W
W
V
V
A
°C
°C
kg·cm
N·m
g
Feb.1999