CR12BM Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR12BM
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR12BM
• IT (AV) ......................................................................... 12A
• VDRM ..............................................................400V/600V
• IGT ..........................................................................30mA
APPLICATION
Automatic strobe flasher
OUTLINE DRAWING
1.3
4
10.5 MIN
Dimensions
in mm
TYPE
∗
NAME
VOLTAGE
CLASS
1
3
1
2
0.5
2.6
1 CATHODE
2 ANODE
3 GATE
4 ANODE
∗ Measurement
point of case
temperature
0.8
2.5 2.5
10.5
TO-220C
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
DC off-state voltage
Voltage class
Unit
8
12
400
600
V
500
720
V
320
480
V
400
600
V
320
480
V
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
—
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=91°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
18.8
A
12.0
A
360
A
544
A²s
5
W
0.5
W
6
V
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
1.5
g
Feb.1999