CR10C Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR10C
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR10C
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
(16.2)
1
φ2.0 MIN
1
3
3
φ8.7 MAX
2
1 CATHODE
2 ANODE
3 GATE
2
M6×1
• IT (AV) ......................................................................... 10A
• VDRM .................................................... 400V/600V/800V
• IGT ..........................................................................30mA
LOCK WASHER
NUT
SOLDERLESS TERMINAL
 TELEGRAPH WIRE
 1.04~2.63mm² 
Note: Mica washer and spacer are
provided only upon request.
APPLICATION
DC motor control, electric furnace control, static switches, DC supply
MAXIMUM RATINGS
Symbol
Parameter
8
VRRM
Repetitive peak reverse voltage
400
VRSM
Non-repetitive peak reverse voltage
500
VDRM
Repetitive peak off-state voltage
400
Voltage class
12
600
720
600
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
di/dt
PGM
PG (AV)
VFGM
VRGM
IFGM
Tj
Tstg
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
Critical rate of rise of on-state current
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Conditions
Commercial frequency, sine half wave, 180° conduction, Tc=84°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
VD=1/2VDRM, ITM=30A, IG=0.1A. Tj=25°C, f=60Hz
—
Mounting torque
—
Weight
Typical value
Unit
16
800
V
960
V
800
V
Ratings
15.5
10
200
165
100
5.0
0.5
10
5
2
–30 ~ +125
–30 ~ +125
30
2.94
8.8
Unit
A
A
A
A²s
A/µs
W
W
V
V
A
°C
°C
kg·cm
N·cm
g
Feb.1999