CR05AS Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

CR05AS
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR05AS
LOW POWER USE
NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
Dimensions
in mm
• IT (AV) ........................................................................ 0.5A
• VDRM ..............................................................200V/400V
• IGT ......................................................................... 100µA
APPLICATION
Solid state relay, strobe flasher, ignitor, hybrid IC
4.4±0.1
1.6±0.2
1.5±0.1
123
0.5±0.07
0.4±0.07
1.5±0.1 1.5±0.1
(Back side)
0.4
+0.03
–0.05
2
3
1
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
SOT-89
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
4 (marked “CB”)
8 (marked “CD”)
VRRM
Repetitive peak reverse voltage
200
400
V
VRSM
Non-repetitive peak reverse voltage
300
500
V
VR (DC)
DC reverse voltage
160
VDRM
Repetitive peak off-state voltage ^V1
200
VD (DC)
DC off-state voltage
V1
160
320
V
400
V
320
V
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. With Gate-to-cathode resistance RGK=1kΩ
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=57°C ^V2
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
0.79
A
0.5
A
10
A
0.4
A²s
0.1
W
0.01
W
6
V
6
V
0.1
A
–40 ~ +125
°C
–40 ~ +125
°C
48
mg
Feb.1999