CR03AM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE

CR03AM
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR03AM
LOW POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.3A
• VDRM ..............................................................400V/600V
• IGT ......................................................................... 100µA
APPLICATION
Leakage protector, timer, gas ignitor
132
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VRRM
Repetitive peak reverse voltage
400
600
V
VRSM
Non-repetitive peak reverse voltage
500
800
V
VR (DC)
DC reverse voltage
320
VDRM
Repetitive peak off-state voltage ^V1
400
VDSM
Non-repetitive peak off-state voltage ^V1
500
VD (DC)
DC off-state voltage
V1
320
480
V
600
V
800
V
480
V
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. With gate to cathode resistance RGK=1kΩ.
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=47°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Ratings
Unit
0.47
A
0.3
A
20
A
1.6
A²s
0.5
W
0.1
W
6
V
6
V
0.3
A
–40 ~ +110
°C
–40 ~ +125
°C
0.23
g
Feb.1999