CR02AM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE PLANAR PASSIVATION TYPE

CR02AM
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM
LOW POWER USE
PLANAR PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.3A
• VDRM .................................................... 200V/300V/400V
• IGT ......................................................................... 100µA
132
JEDEC : TO-92
APPLICATION
Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
4
VRRM
Repetitive peak reverse voltage
200
VRSM
Non-repetitive peak reverse voltage
300
VR (DC)
DC reverse voltage
160
VDRM
Repetitive peak off-state voltage ^V1
200
VD (DC)
DC off-state voltage
V1
160
Voltage class
6
300
400
240
300
240
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. With Gate-to-cathode resistance RGK=1kΩ
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=30°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
8
400
V
500
V
320
V
400
V
320
V
Ratings
Unit
0.47
A
0.3
A
10
A
0.4
A²s
0.1
W
0.01
W
6
V
6
V
0.1
A
–40 ~ +125
°C
–40 ~ +125
°C
0.23
g
Feb.1999