CR02AM-8A Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – LOW POWER USE GLASS PASSIVATION TYPE

CR02AM-8A
MITSUBISHI SEMICONDUCTOR 〈THYRISTOR〉
CR02AM-8A
LOW POWER USE
GLASS PASSIVATION TYPE
OUTLINE DRAWING
φ5.0 MAX
4.4
Dimensions
in mm
2
3
1
VOLTAGE
CLASS
TYPE
NAME
1 T1 TERMINAL
2 T2 TERMINAL
3 GATE TERMINAL
CIRCUMSCRIBE
CIRCLE
φ0.7
1.25 1.25
• IT (AV) ........................................................................ 0.3A
• VDRM ....................................................................... 400V
• IGT ......................................................................... 100µA
APPLICATION
Strobe flasher
132
JEDEC : TO-92
MAXIMUM RATINGS
Symbol
Parameter
VRRM
VRSM
VR (DC)
VDRM
VD (DC)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage ^V1
DC off-state voltage
V1
Voltage class
8
400
500
320
400
320
Symbol
IT (RMS)
IT (AV)
ITSM
I^2t
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I^2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VFGM
Peak gate forward voltage
VRGM
Peak gate reverse voltage
IFGM
Peak gate forward current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
V1. With gate to cathode resistance RGK=1kΩ.
Conditions
Commercial frequency, sine half wave, 180° conduction, Ta=30°C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
V
V
V
V
V
Ratings
Unit
0.47
A
0.3
A
10
A
0.4
A²s
0.1
W
0.01
W
6
V
6
V
0.1
A
–40 ~ +125
°C
–40 ~ +125
°C
0.23
g
Feb.1999