CM600HG-90H Datasheet, PDF (1/7 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM600HG-90H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM600HG-90H
● IC .................................................................. 600 A
● VCES ...................................................... 4500 V
● High Insulated Type
● 1-element in a Pack
● AISiC Baseplate
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
57
±0.25
130
±0.5
57
±0.25
Dimensions in mm
4-M8 NUTS
(4)
(2)
C
C
C
G
E
E
E
(3)
(1)
CIRCUIT DIAGRAM
22
±0.3
41
±0.5
LABEL
4
2
3
>PET+PBT<
E
>PET+PBT<
G
1
C
3-M4 NUTS
18
±0.3
screwing depth
min. 7.7
28.5
±0.5
42.5
±0.5
30.7
±0.5
61.2
±0.5
16.5
±0.3
6-φ7 MOUNTING HOLES
screwing depth
min. 16.5
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
1
May 2009