English
Language : 

CM50DY-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER SWITCHING USE INSULATED TYPE
MITSUBISHI IGBT MODULES
CM50DY-24H
MEDIUM POWER SWITCHING USE
INSULATED TYPE
DM
E
A
B
F
C
F
K
C2E1
E2
N
(3 TYP.)
R
H
L
C1
S - M5 THD
(3 TYP.)
R
H
Q - DIA.
(2 TYP.)
J
R
TAB#110 t=0.5
P
G
G2
E2
C2E1
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
Inches
3.70
3.150±0.01
1.57
1.34
1.22 Max.
0.90
0.85
0.79
0.71
Millimeters
94.0
80.0±0.25
40.0
34.0
31.0 Max.
23.0
21.5
20.0
18.0
Dimensions
K
L
M
N
P
Q
R
S
Inches
0.67
0.63
0.51
0.47
0.28
0.256 Dia.
0.16
M5 Metric
Millimeters
17.0
16.0
13.0
12.0
7.0
Dia. 6.5
4.0
M5
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM50DY-24H
is a 1200V (VCES), 50 Ampere
Dual IGBT Module.
Type
CM
Current Rating
Amperes
50
VCES
Volts (x 50)
24
Sep.1998