English
Language : 

CM400DY-12H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI IGBT MODULES
CM400DY-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
C
D
A
B
F
F
G
C2E1
E2
C1
P
J
N - DIA.
(4 TYP.)
E
K
Q - M6 THD
(3 TYP.)
M
M
P
R
TAB#110 t=0.5
L
H
M
G2
E2
C2E1
E2
C1
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
4.25
3.66±0.01
2.44
1.89±0.01
1.22 Max.
0.98
0.85
0.60
Millimeters
108.0
93.0±0.25
62.0
48.0±0.25
31.0 Max.
25.0
21.5
15.2
E1
G1
Dimensions
J
K
L
M
N
P
Q
R
Inches
0.59
0.55
0.30
0.28
0.256 Dia.
0.24
M6 Metric
0.20
Millimeters
15.0
14.0
8.5
7.0
Dia. 6.5
6.0
M6
5.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system as-
sembly and thermal management.
Features:
ٗ Low Drive Power
ٗ Low VCE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400DY-12H
is a 600V (VCES), 400 Ampere
Dual IGBT Module.
Type
CM
Current Rating
Amperes
400
VCES
Volts (x 50)
12
Sep.1998