CM200HA-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM200HA-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
QM
H
N
S
V–DIA.(4 TYP.)
E
C
E
DF
CM
X–M4 THD.
(2 TYP.)
G
P
B
K ^UK
R
GC
W–M6 THD.
(2 TYP.)
J
T
E
L
E
C
E
G
Outline Drawing and Circuit Diagram
Dimensions Inches
A
4.21
B
3.661±0.01
C
2.44
D
1.89±0.01
E
1.42 Max.
F
1.34
G
1.18
H
1.14
J
0.98 Max.
K
0.94
L
0.93
Millimeters
107.0
93.0±0.25
62.0
48.0±0.25
36.0 Max.
34.0
30.0
29.0
25.0 Max.
24.0
23.5
Dimensions Inches
M
0.83
N
0.69
P
0.63
Q
0.51
R
0.43
S
0.35
T
0.28
U
0.12
V
0.26 Dia.
W
M6 Metric
X
M4 Metric
Millimeters
21.0
17.5
16.0
13.0
11.0
9.0
7.0
3.0
Dia. 6.5
M6
M4
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module con-
sists of one IGBT in a single con-
figuration with a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assem-
bly and thermal management.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e.
CM200HA-24H is a 1200V (V_CES),
200 Ampere Single IGBT Module.
Type
CM
Current Rating
Amperes
200
V_CES
Volts (x 50)
24
Sep.1998