CM200E3U-24F Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

CM200E3U-24F
MITSUBISHI IGBT MODULES
CM200E3U-24F
HIGH POWER SWITCHING USE
¡IC ................................................................... 200A
¡VCES ......................................................... 1200V
¡Insulated Type
¡1-element in a pack
APPLICATION
Brake
OUTLINE DRAWING & CIRCUIT DIAGRAM
108
93 ±0.25
14
14
14
Tc measured point
Dimensions in mm
4
CM
C2 E1
E2
C1
25
25
3–M6 NUTS
4–φ6.5 MOUNTING HOLES
21.5 2.5
1MAX
18 7 18 7 18
LABEL
TAB #110. t=0.5
RTC
C2E1
E2
C1
CIRCUIT DIAGRAM
Mar.2002