CM1600HC-34H Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM1600HC-34H
HIGH POWER SWITCHING USE
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1600HC-34H
q IC ................................................................ 1600A
q VCES ....................................................... 1700V
q Insulated Type
q 1-element in a Pack
q AISiC Baseplate
q Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
57±0.25
130
114
57±0.25
C
C
CM E
E
E
G
C
3 - M4 NUTS
16.5
2.5
18.5
61.5
screwing depth
18
min. 7.7
4 - M8 NUTS
C
C
C
G
E
E
E
CIRCUIT DIAGRAM
6 - φ 7 MOUNTING HOLES
screwing depth
min. 11.7
11
14.5
5
35
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005