CM150E3U-24H_09 Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

CM150E3U-24H
MITSUBISHI IGBT MODULES
CM150E3U-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
● IC ................................................................... 150A
● VCES ....................................................... 1200V
● Insulated Type
● 1-element in a pack
APPLICATION
Brake
OUTLINE DRAWING & CIRCUIT DIAGRAM
108
TC measured point
93 ±0.25
14
14
14
Dimensions in mm
CM
C2E1
E2
C1
25
25
21.5
2.5
3-M6 NUTS
4-φ6.5 MOUTING HOLES
4
18 7 18 7 18
2.8
LABEL
C2E1
E2
C1
CIRCUIT DIAGRAM
0.5
0.5
Feb. 2009
1