CM150DU-24H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM150DU-24H
HIGH POWER SWITCHING USE
INSULATED TYPE
T_C Measured
Point
A
D
BE
T ^CM
F
S(4 - Mounting
Holes)
H
U
J
H
3 - M6 Nuts
Q
Q
P
N
G
K
K
K
R
M
C
L
C2E1
E2
G2
E2
C1
E1
G1
Outline Drawing and Circuit Diagram
Dimensions Inches
Millimeters
A
4.25
108.0
B
2.44
62.0
C 1.14 +0.04/-0.02 29 +1.0/-0.5
D
3.66±0.01
93.0±0.25
E
1.88±0.01
48.0±0.25
F
0.87
22.0
G
0.16
4.0
H
0.24
6.0
J
0.59
15.0
Dimensions Inches
K
0.71
L
0.87
M
0.33
N
0.10
P
0.85
Q
0.98
R
0.11
S
0.25 Dia.
T
0.6
Millimeters
18.0
22.0
8.5
2.5
21.5
25.0
2.8
6.5 Dia.
15.15
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of two
IGBTs in a half-bridge configuration
with each transistor having a re-
verse-connected super-fast recov-
ery free-wheel diode. All compo-
nents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM150DU-24H is a
1200V (V_CES), 150 Ampere Dual
IGBT Module.
Type
CM
Current Rating
Amperes
150
V_CES
Volts (x 50)
24
Sep.1998