CM1200DC-34N Datasheet, PDF (1/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI HVIGBT MODULES
CM1200DC-34N
HIGH POWER SWITCHING USE
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
INSULATED TYPE
CM1200DC-34N
q IC ................................................................ 1200A
q VCES ....................................................... 1700V
q Insulated Type
q 2-element in a Pack
q AISiC Baseplate
q Trench Gate IGBT : CSTBT™
q Soft Reverse Recovery Diode
APPLICATION
Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
57±0.25
130±0.5
57±0.25
4 - M8 NUTS
Dimensions in mm
4
2
3
E1
G1
C1
1
E2
C2
G2
4(E1)
E1
2(C2)
C2
G1
G2
C1
3(C1)
E2
1(E2)
CIRCUIT DIAGRAM
6 - M4 NUTS
16±0.2 18±0.2
40±0.2
53±0.2
44±0.2
57±0.2
screwing depth
min. 7.7
11.85±0.2
55.2±0.3
6 - φ 7 MOUNTING HOLES
screwing depth
min. 16.5
11.5±0.2
14±0.2
35±0.2
5±0.2
LABEL
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005