CM100TU-12F Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE

CM100TU-12F
MITSUBISHI IGBT MODULES
CM100TU-12F
HIGH POWER SWITCHING USE
¡IC ................................................................... 100A
¡VCES ............................................................ 600V
¡Insulated Type
¡6-elements in a pack
APPLICATION
General purpose inverters & Servo controls, etc
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
102
80 ±0.25
20
10
10
4–φ5.5
MOUNTING HOLES
(4)
CM
N
P
GuP
EuP
GvP
EvP
GwP
EwP
11 19.1 11 19.1 11 11.85
G
E
G
E
G
E
G
E
U
G
E
G
E
V
W
GuN
EuN
GvN
EvN
GwN
EwN
5–M4NUTS
Tc measured point
2.8
10
10
10
20
20
3.05
11 19.1 11 19.1 11
Tc measured point
4
P
GUP
RTC
LABEL
EUP _U
GUN
RTC
EUN
N
29
+1
–0.5
GVP
RTC
EVP _V
GVN
RTC
EVN
GWP
RTC
EWP _W
GWN
RTC
EWN
CIRCUIT DIAGRAM
Aug. 1999