CM100TF-12H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM100TF-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Z - M4 THD
(7 TYP.)
P
D
G
N
U
N
A
C
S
X QX QX N
GuP E uP
GvP E vP
GwP E wP
GuN E uN
GvN E vN
GwN E wN
U
V
W
P
P
G
B
N
R
E
T
KJ
AA
L
TAB #110, t = 0.5
M
M AA
L
FH
Y DIA. (4 TYP.)
V
AB
P
GuP
P
EuP
GvP
EvP
GwP
EwP
GuN
EuN
U
N
GvN
EvN
V
Outline Drawing and Circuit Diagram
GwN
EwN
W
Dimensions Inches
Millimeters
A
4.02±0.02
102±0.5
B
3.58±0.02
91.0±0.5
C
3.15±0.01
80.0±0.25
D
2.913±0.01
74.0±0.25
E
1.69
43.0
F 1.18+0.06/-0.02 30.0+1.5/-0.5
G
1.18
30.0
H
1.16
29.5
J
1.06
27.0
K
0.96
24.5
L
0.87
22.0
M
0.79
20.0
N
0.67
17.0
Dimensions Inches
P
0.65
Q
0.55
R
0.47
S
0.43
T
0.39
U
0.33
V
0.32
X
0.24
Y
0.22 Dia.
Z
M4 Metric
AA
0.08
AB
0.28
N
Millimeters
16.5
14.0
12.0
11.0
10.0
8.5
8.1
6.0
Dia. 5.5
M4
2.0
7.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of six
IGBTs in a three phase bridge con-
figuration, with each transistor
having a reverse-connected super-
fast recovery free-wheel diode. All
components and interconnects are
isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM100TF-12H
is a 600V (V_CES), 100 Ampere
Six-IGBT Module.
Type
Current Rating
Amperes
V_CES
Volts (x 50)
CM
100
12
Sep.1998