CM100BU-12H Datasheet, PDF (1/4 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

MITSUBISHI IGBT MODULES
CM100BU-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
B
F
G
EH E
R
S(4 - Mounting
Holes)
L
GuP
C
EuP
D
T_C
Measured
Point
GvP
EvP
U
GuN
EuN
V
M
T_C Measured
Point
P
GvN
EvN
Q
4 - M4 NUTS
J
J
EH
K
F
G
VWV
L
N
TAB#110 t=0.5
T
U
X
P
GuP
GvP
EuP
EvP
U
V
GuN
EuN
N
Outline Drawing and Circuit Diagram
Dimensions Inches
A
2.83
B
2.17±0.01
C
3.58
D
2.91±0.01
E
0.43
F
0.79
G
0.69
H
0.75
J
0.39
K
0.41
L
0.05
Millimeters
72.0
55±0.25
91.0
74.0±0.25
11.0
20.0
17.5
19.1
10.0
10.5
1.25
GvN
EvN
Dimensions Inches
M
0.74
N
0.02
P
1.55
Q
0.63
R
0.57
S
0.22 Dia.
T
0.32
U
1.02
V
0.59
W
0.20
X
1.61
Millimeters
18.7
0.5
39.3
16.0
14.4
5.5 Dia.
8.1
26.0
15.0
5.0
41.0
Description:
Mitsubishi IGBT Modules are de-
signed for use in switching applica-
tions. Each module consists of four
IGBTs in an H-Bridge configura-
tion, with each transistor having a
reverse-connected super-fast re-
covery free-wheel diode. All com-
ponents and interconnects are iso-
lated from the heat sinking base-
plate, offering simplified system
assembly and thermal manage-
ment.
Features:
ٗ Low Drive Power
ٗ Low V_CE(sat)
ٗ Discrete Super-Fast Recovery
Free-Wheel Diode
ٗ High Frequency Operation
ٗ Isolated Baseplate for Easy
Heat Sinking
Applications:
ٗ AC Motor Control
ٗ Motion/Servo Control
ٗ UPS
ٗ Welding Power Supplies
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM100BU-12H is a
600V (V_CES), 100 Ampere Four-
IGBT Module.
Type
CM
Current Rating
Amperes
100
V_CES
Volts (x 50)
12
Sep.1998