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BCR16PM Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR16PM
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR16PM
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10.5 MAX
5.2
Dimensions
in mm
2.8
TYPE
NAME
VOLTAGE
CLASS
φ3.2±0.2
1.3 MAX
0.8
2.54
2.54
0.5
2.6
• IT (RMS) ...................................................................... 16A
• VDRM ..............................................................400V/600V
• IFGT !, IRGT !, IRGT # ......................... 30mA (20mA) V5
• Viso ........................................................................ 1500V
• UL Recognized: File No. E80276
123
2
∗ Measurement point of
case temperature
1 T1 TERMINAL
2 T2 TERMINAL
3 3 GATE TERMINAL
1
TO-220F
APPLICATION
Contactless AC switches, light dimmer, electric flasher unit, hair drier, control of household equipment
such as TV sets · refrigerator · washing machine · electric fan,
other general purpose control applications
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
8
12
VDRM
Repetitive peak off-state voltage V1
400
600
V
VDSM
Non-repetitive peak off-state voltage V1
500
720
V
Symbol
IT (RMS)
ITSM
I2t
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
PGM
Peak gate power dissipation
PG (AV)
Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
—
Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Ratings
Unit
Commercial power frequency, sine full wave 360° conduction, Tc=71°C
16
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
160
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
107.5
A2s
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
5.0
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
1500
V
Feb.1999