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BCR12KM-14 Datasheet, PDF (1/2 Pages) Mitsubishi Electric Semiconductor – MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR12KM-14
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
BCR12KM-14
MEDIUM POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
OUTLINE DRAWING
10 ± 0.3
Dimensions in mm
2.8 ± 0.2
φ 3.2 ± 0.2
2.54 ± 0.25
1.1 ± 0.2
E 1.1 ± 0.2
0.75 ± 0.15 0.75 ± 0.15
2.54 ± 0.25
ŒŽ
V Measurement point of
case temperature
q IT (RMS) ................................................................ 12A
q VDRM ................................................................. 700V
q IFGT !, IRGT ! , IRGT # .................................... 30mA
q Viso .................................................................. 2000V

ΠT1 TERMINAL
 T2 TERMINAL
Ž Ž GATE TERMINAL
Œ
TO-220FN
APPLICATION
Switching mode power supply, light dimmer, electric flasher unit, hair driver,
control of household equipment such as TV sets • stereo • refrigerator • washing machine •
infrared kotatsu • carpet, solenoid drivers, small motor control, copying machine, electric tool
MAXIMUM RATINGS
Symbol
Parameter
Voltage class
Unit
14
V DRM
Repetitive peak off-state voltageV1
700
V
V DSM
Non-repetitive peak off-state voltageV1
840
V
Symbol
IT (RMS)
ITSM
Parameter
RMS on-state current
Surge on-state current
I2t
I2t for fusing
PGM
Peak gate power dissipation
PG (AV) Average gate power dissipation
VGM
Peak gate voltage
IGM
Peak gate current
Tj
Junction temperature
Tstg
Storage temperature
— Weight
Viso
Isolation voltage
V1. Gate open.
Conditions
Ratings
Unit
Commercial frequency, sine full wave 360° conduction, Tc=81°C
12
A
60Hz sinewave 1 full cycle, peak value, non-repetitive
120
A
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
60
A2s
Typical value
Ta=25°C, AC 1 minute, T1 · T2 · G terminal to case
5
W
0.5
W
10
V
2
A
–40 ~ +125
°C
–40 ~ +125
°C
2.0
g
2000
V
Feb.1999